Electronics Weekly Electronics Design & Components Tech News
It combines 1kV silicon IGBTs and 1.2kV silicon carbide diodes in the company’s F5BP package.
Called NXH500B100H7F5SHG, it can handle continuous collector currents up to 210A (630A pulsed) (Tj = 175°C). Abs max power dissipation is 305W.
To reducing stray inductance and thermal resistance, said the company, inside is a direct-bonded copper substrate and a copper baseplate.
IGBT-to-case thermal resistance is 0.198°C/W and, with thermal grease at the interface, 0.263°C/W chip-to-heatsink can be achieved. Thermal conductivity to the SiC diode die are 0.316°C/W and 0.405°C/W respectively.
Find the data sheet here
I found surprisingly few explanations online of how the flying capacitor boost circuit worked – none of them good in terms of being readily accessible. I guess I need to find some time on LTspice.